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Polar TM Power MOSFET
HiperFET TM
IXFA12N50P
IXFP12N50P
V DSS
I D25
R DS(on)
= 500V
= 12A
≤ 500m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
500
500
V
V
TO-263 (I XFA )
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
S
(TAB)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
12
30
12
600
A
A
A
mJ
TO-220 (I XFP )
dV/dt
P D
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
20
200
V/ns
W
G
D S
(TAB)
T J
T JM
T stg
T L
1.6mm (0.062) from case for 10s
-55 ... +150
150
-55 ... +150
300
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T SOLD
Plastic body for 10s
260
° C
Features
M d
Weight
Mounting torque
TO-263
TO-220
(TO-220)
1.13 / 10
2.5
3.0
Nm/lb.in.
g
g
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS = 0V, I D = 250 μ A
500
V
V GS(th)
V DS = V GS , I D = 1mA
3.0
5.5
V
I GSS
V GS = ± 30V, V DS = 0V
± 100 nA
I DSS
V DS = V DSS
V GS = 0V
T J = 125 ° C
5
250
μ A
μ A
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
500 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99436F(04/08)
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